Journal
THIN SOLID FILMS
Volume 515, Issue 4, Pages 1651-1657Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2006.05.046
Keywords
explosive crystallization phenomenon; excimer laser annealing; silicon thin films; optical diagnostic measurements
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Melting and crystallization scenario of amorphous silicon (a-Si) thin films have been investigated using in situ time-resolved optical reflection and transmission measurements. The explosive crystallization phenomenon is observed using a single-mode continuous wave He-Ne probe laser for thickness of 50 nm and 90 nm a-Si thin films upon 25 ns pulse duration of XeF excimer laser irradiation, respectively. The explosive crystallization phenomenon is easier to observe in the large thickness of a-Si thin films, a sample with pure a-Si microstructure and under longer pulse duration of excimer laser irradiation by time-resolved optical reflection and transmission measurements. (c) 2006 Elsevier B.V. All rights reserved.
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