Simple-layered high mobility field effect heterostructured two-dimensional electron device

The authors present a two-dimensional electron heterostructure field effect device of simplistic design and ease of fabrication that displays high mobility electron transport. This is accomplished using a high efficacy contacting scheme and simple metallic overlapping gate, obviating dopant layers. The resultant devices demonstrate adjustable electron densities and mobilities larger than 8x10(6) cm(2)/V s at the highest densities of 2.4x10(11)/cm(2). This device type provides an experimental avenue for studying electron correlations and may answer demands for routine fabrication of practical high electron mobility transistors. (c) 2006 American Institute of Physics.