Journal
APPLIED PHYSICS LETTERS
Volume 89, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2408660
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Ge2Sb2Te5 (GST) film in the crystalline state was nitrogen doped using the reactive sputtering method in order to increase sheet resistance. High-resolution x-ray absorption spectroscopy revealed that molecular nitrogen (N-2) existed in the N-doped GST film. This finding implies that both molecular nitrogen and atomic-state nitrogen should be taken into account in understanding the structures of N-doped GST film. The molecular nitrogen is believed to exist at interstitial and vacancy sites, and more likely at grain boundaries. (c) 2006 American Institute of Physics.
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