Journal
APPLIED PHYSICS LETTERS
Volume 89, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2404949
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Ferroelectric Bi3.25La0.75Ti3O12 (BLT) films were grown on Pt/Ti/SiO2/Si (Pt/Si), LaNiO3/Pt/Si, and LaNiO3/Si substrates using chemical solution deposition technique. X-ray diffraction analysis shows that films grown on conductive LaNiO3 electrodes had higher degree of (117) orientation as compared to that grown directly on Pt/Si substrate. High remanent polarization value (2P(r))similar to 43.14 mu C/cm(2) (E-c of 111 kV/cm) under an applied field of 396 kV/cm was obtained for BLT film on LaNiO3/Pt/Si as compared to a value of 26 mu C/cm(2) obtained for BLT film on Pt/Si directly. There was no degradation in the switchable polarization (P-sw-P-ns) after 10(10) switching cycles. (c) 2006 American Institute of Physics.
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