Journal
APPLIED PHYSICS LETTERS
Volume 89, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2404936
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The authors experimentally demonstrate strong light confinement and enhancement of emission at 1.54 mu m in planar silicon-on-insulator waveguides containing a thin layer (slot) of SiO2 with Er3+ doped Si nanoclusters. Angle-resolved attenuated total reflectance is used to excite the slab guided modes, giving a direct evidence of the strong confinement of the electric field in the low-index active material for the fundamental transverse-magnetic mode. By measuring the guided photoluminescence from the cleaved-edge of the sample, the authors observe a more than fivefold enhancement of emission for the transverse-magnetic mode over the transverse-electric one. These results show that Si-based slot waveguides could be important as starting templates for the realization of Si-compatible active optical devices. (c) 2006 American Institute of Physics.
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