Journal
APPLIED PHYSICS LETTERS
Volume 89, Issue 26, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2410228
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A grating-bicoupled plasmon-resonant terahertz emitter was fabricated using InGaP/InGaAs/GaAs heterostructure material systems. The device structure is based on a high-electron mobility transistor and incorporates doubly interdigitated grating gates that periodically localize the two-dimensional (2D) plasmon in 100 nm regions with a submicron interval. Photoexcited electrons, injected to the 2D plasmon cavities, extensively promoted the plasmon instability, resulting in observation of emission of terahertz electromagnetic radiation at room temperature. (c) 2006 American Institute of Physics.
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