InGaAs/GaAs/alkanethiolate radial superlattices

A radial InGaAs/GaAs/1-hexadecanethiol superlattice is fabricated by the roll-up of a strained InGaAs/GaAs bilayer passivated with a molecular self-assembled monolayer. The technique allows the formation of multiperiod inorganic/organic hybrid heterostructures. The authors investigate the radial superlattices in a detailed transmission electron microscopy study. The structure consists of 11 tightly bonded semiconductor/organic layers with thicknesses and chemical compositions accurately controlled by epitaxial growth and self-assembly. Their chemical analysis reveals that neither any detectable oxygen contamination nor amorphization is present at the superlattice interfaces. (c) 2006 American Institute of Physics.