Journal
APPLIED PHYSICS LETTERS
Volume 89, Issue 26, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2425020
Keywords
-
Categories
Ask authors/readers for more resources
The stability of thin film transistors incorporating sputtered ZnO as the channel layer is investigated under gate bias stress. Positive stress results in a positive shift of the transfer characteristics, while negative stress results in a negative shift. Low bias stress has no effect on the subthreshold characteristics. This instability is believed to be a consequence of charge trapping at/near the channel/insulator interface. Higher biases and longer stress times cause degradation of the subthreshold slope, which is thought to arise as a consequence of defect state creation within the ZnO channel material. After all stress measurements, the devices recover their original characteristics at room temperature without any annealing. (c) 2006 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available