Growth of blue GaN LED structures on 150-mm Si(111)

Up to 5.4-mu m thick GaN on Si light emitting diode (LED) structures were grown by metalorganic chemical vapor phase epitaxy (MOVPE) on 150 mm Si(111) substrates. In-situ curvature measurements enable monitoring of stress development during growth and the influence of interlayers on strain balancing after cooling. In X-ray diffraction (XRD) omega-scans the GaN (0002) reflection is about 380 arcsec and in theta-2 theta measurements the InGaN/GaN MQW interference peaks are well resolved indicating the high quality of the grown structure. In comparison to the growth on 2-in sapphire the wafer curvature after growth is low (> 50 m) for the growth on Si and also during MQW growth at low temperatures a homogeneous wafer temperature can be achieved. The standard deviation of the wavelength over the whole 150-mm test wafer (5-mm edge exclusion) is < 3.5 nm and reflects the three different heater zones of the MOVPE system used. (c) 2006 Elsevier B.V. All rights reserved.