Journal
PHYSICAL REVIEW B
Volume 75, Issue 4, Pages -Publisher
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevB.75.045203
Keywords
-
Ask authors/readers for more resources
We show that the band gap bowing trends observed in III-V alloys containing dilute concentrations of Sb or Bi can be explained within the framework of the valence-band anticrossing model. Hybridization of the extended p-like states comprising the valence band of the host semiconductor with the close-lying localized p-like states of Sb or Bi leads to a nonlinear shift of the valence-band edge and a reduction of the band gap. The two alloys GaSbxAs1-x and GaBixAs1-x are explored in detail, and the results are extrapolated to additional systems.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available