Electric switching and memory devices made from RbAg4I5 films

Electric switching and memory effects were observed on devices composed of a RbAg4I5 film sandwiched between Ag and Pt electrodes. The RbAg4I5 films were prepared by pulsed laser deposition and the lateral size of devices was scaled down to 300 nm by focused ion beam lithography. The device can be switched between high- and low-resistance states with a ratio of similar to 10(3) by applying voltage with opposite polarities. The read-write cycles could be repeated at 1 kHz and for 10(4) times. The switching characters are attributed to the formation or breakdown of Ag filaments in RbAg4I5 films induced by electrochemical reactions. (c) 2007 American Institute of Physics.