Journal
ADVANCED MATERIALS
Volume 19, Issue 1, Pages 73-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200601025
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Funding
- National Research Foundation of Korea [R01-2006-000-10883-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A one-diode/one-resistor structure, Pt/NiO/Pt/p-NiOx/n-TiOx/Pt, has been fabricated. This novel structure exhibits bistable resistance switching under forward bias, while the diode suppresses resistance switching in the Pt/NiO/Pt memory cell under reverse bias (see figure). Its low processing temperature and small cell size, as well as excellent rectifying characteristics, make this Pt/p-NiOx/n-TiOx/Pt diode structure a promising switch element for high-density, nonvolatile memory devices with 3D stack and cross-point structures.
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