Journal
APPLIED PHYSICS LETTERS
Volume 90, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2430930
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Self-assembled In1-xMnxAs quantum dots (0.19 <= x <= 0.45) have been grown on GaAs (100) substrates by low-temperature molecular beam epitaxy. The microstructure analysis revealed that the uniformly distributed In1-xMnxAs dots have a zinc blende structure as x <= 0.38. Furthermore, all samples exhibit ferromagnetic state at 5 K, and their Curie temperatures range from 260 to 340 K varying with x. These (In, Mn)As quantum dots are promising for room-temperature spintronic devices.
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