Journal
SENSORS AND ACTUATORS B-CHEMICAL
Volume 120, Issue 2, Pages 657-664Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2006.03.027
Keywords
In2O3; gas response; improvement; doping; Raman spectroscopy; chemical composition
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In this paper the influence of additives on gas response of In2O3-based one-electrode sensors is discussed. The analysis of Raman scattering of doped In2O3 ceramics was carried out, and the mechanism of doping influence on In2O3 grain structure is suggested. It is concluded that the appearance of the second phase in In2O3-based ceramics is the main factor controlling the change of gas sensing characteristics. (c) 2006 Elsevier B.V. All rights reserved.
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