Journal
JOURNAL OF APPLIED PHYSICS
Volume 101, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2409662
Keywords
-
Categories
Ask authors/readers for more resources
Hafnium silicate has a high dielectric constant and is a leading candidate to act as a gate dielectric. The defect energy levels have been calculated. The oxygen vacancy is found to give rise to Si-like levels which lie within the band gap of Si. The vacancy states are very localized and are localized on the neighboring Si sites. A second defect level high in the oxide gap is localized on the Hf sites. The behavior of ZrSiO4 is similar. (c) 2007 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available