Charge offset stability in tunable-barrier Si single-electron tunneling devices

The problem of charge offset drift in single-electron tunneling (SET) devices can preclude their useful application in metrology and integrated devices. We demonstrate that in tunable-barrier Si-based SET transistors there is excellent stability, with a drift that is in general less than 0.01e; these devices exhibit some unwanted sensitivity to external perturbations including temperature excursions. Finally, we show that these devices can be trained to minimize their sensitivity to abrupt voltage changes. (c) 2007 American Institute of Physics.