4.6 Article

Raman amplification of 40 Gb/s data in low-loss silicon waveguides

Journal

OPTICS EXPRESS
Volume 15, Issue 2, Pages 357-362

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OE.15.000357

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We demonstrate on-chip Raman amplification of an optical data signal at 40 Gb/s in a silicon-on-insulator p-i-n rib waveguide. Using 230 mW of coupled pump power, on/off gain of up to 2.3 dB is observed, while signal integrity is maintained. In addition, the gain is measured as a function of signal wavelength detuning from the Stokes wavelength. The Lorentzian linewidth of the Raman gain profile is determined to be approximately 80 GHz. This provides applicability for the selective amplification of individual DWDM optical channels. (c) 2007 Optical Society of America.

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