Journal
APPLIED PHYSICS LETTERS
Volume 90, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2436636
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Magnesium oxide (111) was grown epitaxially on hexagonal silicon carbide (6H-SiC) (0001) substrates at low temperatures by molecular beam epitaxy and a remote oxygen plasma source. The films were characterized by reflection high-energy electron diffraction, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and atomic force microscopy. Crystal structure, morphology, and growth rate of the magnesium oxide (MgO) films were found to be dependent on the magnesium flux, indicating a magnesium adsorption controlled growth mechanism. The single crystalline MgO thin films had an epitaxial relationship where MgO (111)parallel to 6H-SiC (0001) and were stable in both air and 10(-9) Torr up to 1023 K. (c) 2007 American Institute of Physics.
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