Journal
APPLIED PHYSICS LETTERS
Volume 90, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2436720
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Materials showing reversible resistance switching between high-resistance state and low-resistance state at room temperature are attractive for today's semiconductor technology. In this letter, the reproducible hysteresis and resistive switching characteristics of metal-CuxO-metal (M-CuxO-M) heterostructures driven by low voltages are demonstrated. The fabrication of the M-CuxO-M heterostructures is fully compatible with the standard complementary metal-oxide semiconductor process. The hysteresis and resistive switching behavior are discussed. The good retention characteristics are exhibited in the M-CuxO-M heterostructures by the accurate controlling of the preparation parameters. (c) 2007 American Institute of Physics.
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