Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 10, Issue 1, Pages 19-23Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2006.12.001
Keywords
CdTe; thin film; PLD; heterojunction; photodetector
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The present study is on the optoelectronic properties of isotype CdTe/c-Si heterojunction photodetector made by deposition of CdTe by pulsed laser deposition (PLD) technique on clean monocrystalline Si. Optical, electrical and structural properties of grown CdTe film were investigated. The optical data show that the optical band gap of CdTe was around 1.45 eV at 300 K. The CdTe/Si junction exhibits fair diode rectification and the soft breakdown occurred at VB > 9 V. Dark and illuminated I- V characteristics of the CdTe/Si photodetector are examined at room temperature. The photodetector showed good photosensitivity in the visible and near-infrared regions with a value as high as 0.5A/W at 950 nm. (C ) 2007 Elsevier Ltd. All rights reserved.
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