Density and thermal conductivity measurements for silicon melt by electromagnetic levitation under a static magnetic field

The density and thermal conductivity of a high-purity silicon melt were measured over a wide temperature range including the undercooled regime by non-contact techniques accompanied with electromagnetic levitation (EML) under a homogeneous and static magnetic field. The maximum undercooling of 320 K for silicon was controlled by the residual impurity in the specimen, not by the melt motion or by contamination of the material. The temperature dependence of the measured density showed a linear relation for temperature as: rho(T) = 2.51 x 10(3)-0.271(T-T (m)) kg . m(-3) for 1367 K < T < 1767 K, where T (m) is the melting point of silicon. A periodic heating method with a CO2 laser was adopted for the thermal conductivity measurement of the silicon melt. The measured thermal conductivity of the melt agreed roughly with values estimated by a Wiedemann-Franz law.