Journal
MICROELECTRONIC ENGINEERING
Volume 84, Issue 2, Pages 313-318Publisher
ELSEVIER
DOI: 10.1016/j.mee.2006.10.085
Keywords
macroporous silicon; electrochemical etching; atomic layer deposition; thin films; high aspect ratio capacitor
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High surface area Si/Al2O3/ZnO:Al capacitors were formed in electrochemically etched porous silicon. The Al2O3 dielectric and the ZnO:Al top electrode were deposited by atomic layer deposition in high aspect ratio porous Si. A single capacitor with a typical area of about 1 mm(2) consisted of about 10(5) pores. Effective capacitance densities were between 2.0 and 2.5 mu F/cm(2), i.e., approximately 30 times higher than for a planar capacitor prepared under identical conditions, illustrating the effect of the enhanced surface area in the porous structure. (c) 2006 Elsevier B.V. All rights reserved.
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