4.8 Article

Storage of Electrical Information in Metal-Organic-Framework Memristors**

Journal

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
Volume 53, Issue 17, Pages 4437-4441

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/anie.201309642

Keywords

memristors; metal-organic frameworks; negative differential resistance; non-volatile memory; resistive random access memory

Funding

  1. Non-Equilibrium Energy Research Center (NERC), which is an Energy Frontier Research Center
  2. U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-SC0000989]

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Single crystals of a cyclodextrin-based metal-organic framework (MOF) infused with an ionic electrolyte and flanked by silver electrodes act as memristors. They can be electrically switched between low and high conductivity states that persist even in the absence of an applied voltage. In this way, these small blocks of nanoporous sugar function as a non-volatile RRAM memory elements that can be repeatedly read, erased, and re-written. These properties derive from ionic current within the MOF and the deposition of nanometer-thin passivating layers at the anode flanking the MOF crystal. The observed phenomena are crucially dependent on the sub-nanometer widths of the channels in the MOF, allowing the passage of only smaller ions. Conversely, with the electrolyte present but no MOF, there are no memristance or memory effects.

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