Journal
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
Volume 53, Issue 29, Pages 7450-7455Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/anie.201402191
Keywords
carbon nitride; graphene; semiconductor; thin films
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Funding
- EPSRC [EP/H000925]
- DAAD
- Academy of Finland [218545, 263416]
- CSC Finland
- European Research Council [278593_ORGZEO]
- BMBF [03IS2071D]
- Helmholtz-Energie-Allianz
- Academy of Finland (AKA) [218545, 218545] Funding Source: Academy of Finland (AKA)
- Engineering and Physical Sciences Research Council [EP/H000925/1] Funding Source: researchfish
- EPSRC [EP/H000925/1] Funding Source: UKRI
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Graphitic carbon nitride has been predicted to be structurally analogous to carbon-only graphite, yet with an inherent bandgap. We have grown, for the first time, macroscopically large crystalline thin films of triazine-based, graphitic carbon nitride (TGCN) using an ionothermal, interfacial reaction starting with the abundant monomer dicyandiamide. The films consist of stacked, two-dimensional (2D) crystals between a few and several hundreds of atomic layers in thickness. Scanning force and transmission electron microscopy show long-range, in-plane order, while optical spectroscopy, X-ray photoelectron spectroscopy, and density functional theory calculations corroborate a direct bandgap between 1.6 and 2.0 eV. Thus TGCN is of interest for electronic devices, such as field-effect transistors and light-emitting diodes.
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