Journal
ADVANCED MATERIALS
Volume 19, Issue 3, Pages 371-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200601792
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An improvement of the performance of bottom-contact organic thin-film transistors is demonstrated by embedding and planarizing the source/drain electrodes in a gate dielectric. The electric contact with the pentacene active layer is superior to conventional electrode configurations because of the favorable growth of pentacene grains adjacent to the source/drain electrode edges: these can be seen in the figure.
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