Journal
APPLIED PHYSICS LETTERS
Volume 90, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2644159
Keywords
-
Categories
Ask authors/readers for more resources
The distribution of deep traps in a bulk dielectric (Al2O3) is imaged by low vacuum scanning electron microscopy (LVSEM). The image contrast corresponds to spatial variations in radiation-induced, field-enhanced conductivity. A methodology is presented for identification of such contrast, the behavior of which is explained by a model of charge generation and transport in dielectrics imaged by LVSEM. The technique presented is applicable to studies of charge traps in dielectrics, device failure modes, and contrast mechanisms in electron microscopy. (c) 2007 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available