Journal
JOURNAL OF APPLIED PHYSICS
Volume 101, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2496007
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We fabricated ZnO nanowire field effect transistors (FETs) and systematically characterized their low frequency (f) noise properties. The obtained noise power spectra showed a classical 1/f dependence. A Hooge's constant of 5x10(-3) was estimated from the gate dependence of the noise amplitude. This value is within the range reported for complementary metal-oxide semiconductor (CMOS) FETs with high-k dielectrics, supporting the concept that nanowires can be utilized for future beyond-CMOS electronic applications from the point of view of device noise properties. ZnO FETs measured in a dry O-2 environment displayed elevated noise levels that can be attributed to increased fluctuations associated with O-2(-) on the nanowire surfaces. (c) 2007 American Institute of Physics.
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