Output properties of C60 field-effect transistors with different source/drain electrodes

C-60 field-effect transistors (FETs) have been fabricated with source/drain electrodes of three different materials, indium tin oxide (ITO), Au, and Pt. High field-effect mobility mu(FE) of FETs with ITO electrodes, 1.6x10(-1) cm(2)/V s, shows that ITO is a potential material for the electrodes of organic electronics. Although the highest Schottky barrier and the lowest mu(FE) were expected, mu(FE) of FET with Pt electrodes (1.4x10(-1) cm(2)/V s) is higher than that of FET with Au electrodes (9.6x10(-2) cm(2)/V s). The result suggests that modification of local electronic structure at the interface between electrodes and C-60 affects device performance. (c) 2007 American Institute of Physics.