HfTiAlO dielectric as an alternative high-k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices

In this letter, the authors report on the material and electrical characterizations of high dielectric constant (k) oxide HfTiAlO for the next generation of complementary metal-oxide semiconductors. Crystallization temperature has been improved to 800-900 degrees C versus that of HfO2. The substitution of Ti and Al in the HfO2 cubic structure results in an increased dielectric constant and an acceptable barrier height. The extracted dielectric constant is 36, and the band offset relative to the Si conduction band is 1.3 eV. An equivalent oxide thickness of 11 A and low leakage have been achieved with good interfacial properties. (c) 2007 American Institute of Physics.