Journal
PLASMA PROCESSES AND POLYMERS
Volume 4, Issue 2, Pages 113-126Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/ppap.200600103
Keywords
atomic oxygen; ionized reactive magnetron sputtering; mass spectrometry; reactive magnetron sputtering; XPS
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One of the major limitations of reactive magnetron sputtering (RMS) is the low deposition rate when the target is poisoned. With the goal of reducing this phenomenon, we studied the chemical mechanisms involved during conventional and ionized reactive magnetron sputtering (iRMS) of metals (Sn, Ti, Ag) in Ar/O-2 mixtures. Target surface, plasma and film compositions were characterized by target voltage, MS and XPS measurements, respectively. Comparing films and plasma compositions, we demonstrated that oxide film formation proceeds by condensation of sputtered material and reaction between the growing film and the reactive species, especially O. Using iRMS, we promoted the latter process: for example, we prepared fully oxidized Sn films using low O-2 in turn flows which limits target poisoning and,, increases the deposition rate (6 times).
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