Effect of polarization and self-energy on the ground donor state in the presence of conduction band nonparabolicity in GaAs-(Al,Ga)As spherical quantum dot

Based on the variational technique, the binding energy associated with the ground donor state in the presence of conduction band nonparabolicity, polarization charge, and self-energy is estimated for a finite-barrier quantum dot, with a hydrogenic impurity located at its center. The overall effect of the conduction band nonparabolicity, polarization charge, and self-energy is found to enhance the ground state binding energy, their influences being most prominent in small dots with high barriers. (c) 2007 American Institute of Physics.