A study of thick 3C-SiC epitaxial layers grown on 6H-SIC substrates by sublimation epitaxy in vacuum

3C-SiC epitaxial layers with a thickness ofup to 100 pm were grown on 6H-SiC hexagonal sub strates by sublimation epitaxy in vacuum. The n-type epitaxial layers with the area in the range 0.3-0.5 cm(2) and uncompensated donor concentration N-d - N-a - (10(17)-10(18)) cm(-3) were produced at maximum growth rates of up to 200 mu m/h. An X-ray analysis demonstrated that the epitaxial layers are composed of the 3C-SiC polytype, without inclusions of other polytypes. The photoluminescence (PL) spectrum of the layers was found to be dominated by the donor-acceptor (Al-N) recombination band peaked at hv approximate to 2.12 eV. The PL spectrum measured at 6 K was analyzed in detail. It is concluded that the epitaxial layers obtained can serve as substrates for 3C-SiC-based electronic devices.