Demonstration of nonpolar m-plane InGaN/GaN laser diodes

The first nonpolar m-plane (1 (1) over bar 00) nitride laser diodes (LDs) have been realized on low extended defect bulk m-plane GaN substrates. The LDs were grown by metal organic chemical vapor deposition (MOCVD) using conditions similar to that of c-plane device growth. Broad area lasers were fabricated and tested under pulsed conditions. Lasing was observed at duty cycles as high as 10%. These laser diodes had threshold current densities (J(th)) as low as 7.5 kA/cm(2). Stimulated emission was observed at 405.5 nm, with a spectral line-width of 1 nm.