Journal
PHYSICAL REVIEW B
Volume 75, Issue 12, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.75.125417
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We report a study of the effect of growth orientation and surface roughness on electron transport in small-diameter hydrogen passivated silicon nanowires (NWs). We employ a nonequilibrium Green's function technique within an sp(3)d(5)s(*) tight-binding approximation to show that band structure strongly affects current-voltage characteristics of ideal NWs, leading to current falloff at high drain bias for certain growth orientations. Surface roughness suppresses small bias conductance and current, and leads to a nonmonotonic dependence on gate bias. We also find that surface roughness results in a decrease of current with the length of a NW. The rate of the decrease depends on the growth directions and diameter. As the diameter of a NW becomes smaller, a transition of electron transport to Anderson localization regime may occur even at room temperature.
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