Journal
JOURNAL OF SOLID STATE CHEMISTRY
Volume 180, Issue 3, Pages 1110-1118Publisher
ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jssc.2007.01.008
Keywords
AgGaS2; photocatalyst; visible light; hydrogen production; H2S treatment
Funding
- National Research Foundation of Korea [2006-06994, R0A-2005-000-10031-0, 과C6A1906] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Bulky AgGaS2 was synthesized as a p-type semiconductor photocatalyst by a conventional solid state reaction under N, flow for hydrogen production under visible light. To remove impurity phases involved in the synthesized material and improve crystallinity, the material was treated at various temperatures of 873-1123 K under H2S flow. Impurity phases were identified as beta-GaO3 and Ag9GaS6 with the cell refinements of XRD and the local coordination structure around gallium atom in AgGaS2 was investigated by EXAFS. As the H2S-treatment temperature increased, the contribution from impurity phases was diminished. When the temperature reached 1123 K, the impurity phases were completely removed and the material showed the highest photocatalytic activity. Thus, the post-synthetic H'S treatment could be applied for the synthesis of sulfide-type photocatalysts with high activity. (c) 2007 Elsevier Inc. All rights reserved.
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