Journal
IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume 43, Issue 3-4, Pages 287-294Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2006.890399
Keywords
differential gain; gain compression; quantum dots (QDs); semiconductor lasers
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The dynamics of optical gain in semiconductor quantum dots (QDs) is investigated. Simple analytical expressions are derived, which directly connect the laser dynamical response to capture and intradot relaxation rates. The effect of hole spreading in the valence band and spectral hole burning in the QD ensemble is also quantitatively assessed. The analysis shows that intradot relaxation constitutes the main limitation in the dynamics and points to possible routes towards the improvement of QD lasers.
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