Shot noise of a multiwalled carbon nanotube field effect transistor

We have investigated shot noise in a 6-nm-diameter, semiconducting multiwalled carbon nanotube field effect transistor at 4.2 K over the frequency range of 600-950 MHz. We find a transconductance of 3-3.5 mu S for optimal positive and negative source-drain voltages V. For the gate referred input voltage noise, we obtain 0.2 and 0.3 mu V/root Hz for V > 0 and V < 0, respectively. As effective charge noise, this corresponds to (2-3)x10(-5) e/root Hz.