Journal
PHYSICAL REVIEW LETTERS
Volume 98, Issue 9, Pages -Publisher
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.98.095901
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We have determined silicon self-diffusivity at temperatures 735-875 degrees C based on the Raman shift of longitudinal optical phonon frequencies of diffusion annealed Si-28/Si-30 isotope superlattices. The activation enthalpy of 3.6 eV is obtained in such low temperature diffusion annealing. This value is significantly smaller than the previously reported 4.95 eV of the self-interstitial mechanism dominating the high temperature region T > 855 degrees C and is in good agreement with the theoretical prediction for the vacancy-mediated diffusion. We present a model, containing both the self-interstitial and the vacancy terms, that quantitatively describes the experimentally obtained self-diffusivity between 735 and 1388 degrees C, with the clear crossover of the two diffusion mechanisms occurring around 900 degrees C.
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