Controlled assembly of zinc oxide nanowires using dielectrophoresis

A structure similar to a field effect transistor with two isolated top electrodes comprising the source and drain and a lower substrate electrode as the gate was used for the dielectrophoresis-based assembly of zinc oxide nanowires. The results reveal that the assembly of nanowires is significantly affected by the gap distance between the two top electrodes as well as the magnitude and frequency of the applied electric field. Gate assisted assemblies using direct current and alternating current dielectrophoresis were also investigated and determined to improve the assembly effect of nanowires. (c) 2007 American Institute of Physics.