Journal
ADVANCED MATERIALS
Volume 19, Issue 5, Pages 734-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200600999
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Near-IR light-emitting ambipolar OFETs are demonstrated, employing a squaraine derivative as the electroactive layer. Efficient control of the emission-region position in the channel is achieved by varying the drain/gate potentials. By using a transport model, combined with experimental results, strong metal-induced electroluminescence quenching is observed when light emission takes place in close proximity to the source-drain electrodes (see figure).
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