Journal
APPLIED PHYSICS LETTERS
Volume 90, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2712497
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The optical and electrical properties of FeSe thin films are studied by both optical absorption and Hall measurements, which suggest that ferromagnetic FeSe is a metal instead of a semiconductor. No absorption gap is observed in the whole spectrum range from far infrared to ultraviolet. Temperature dependent transport measurement indicates that FeSe has a resistivity about 10(-3) Omega cm. It is also found that there is a transition from n-type conductivity at low temperatures to p-type conductivity at higher temperatures in FeSe, which is attributed to the two-carrier transport nature and the thermal activation of localized carriers in the thin film. (c) 2007 American Institute of Physics.
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