High-pressure and high-temperature annealing as an activation method for ion-implanted dopants in diamond

The authors show that high-pressure and high-temperature (HPHT) annealing is very effective for the activation of ion-implanted dopants in diamond. The HPHT annealing condition is located in the thermodynamically stable region for diamond in the phase diagram and is, therefore, much more efficient for the recovery of implantation-induced damage and for the activation of ion-implanted dopants than thermal annealing in vacuum. The B-implanted film after HPHT annealing showed a high mobility of 632 cm(2)/V s with a sheet hole concentration of 4.8x10(10) cm(-2) at 300 K and the doping efficiency of similar to 7%. The mobility is the highest so far for ion-implanted diamond. In the entire annealing temperature range, the HPHT annealing is more efficient than the thermal annealing in vacuum. (c) 2007 American Institute of Physics.