Journal
APPLIED PHYSICS LETTERS
Volume 90, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2716206
Keywords
-
Categories
Ask authors/readers for more resources
ZnO homojunction light-emitting diode with n-ZnO/p-ZnO:As/GaAs structure is produced by metal organic chemical vapor deposition. The p-type ZnO:As film is obtained out of thermal diffusion of arsenic from GaAs substrate with subsequent thermal annealing at 550 degrees C. The n-type layer is composed of unintentionally doped ZnO film. Desirable rectifying behavior is observed from the current-voltage curve of the ZnO p-n homojunction. Furthermore, two distinct electroluminescence bands centered at 3.2 and 2.5 eV are obtained from the junction under forward bias at room temperature. (c) 2007 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available