Journal
ADVANCED MATERIALS
Volume 19, Issue 6, Pages 843-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200600961
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A general low-cost method for ink-jet printing transparent amorphous oxide semiconductors (see figure) is presented. The process uses metal halide precursors dissolved in acetonitrile, and this precursor solution is capable of forming a uniform and continuous metal halide thin film over a large area through both ink-jet printing and blanket-coating techniques.
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