Journal
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
Volume 449, Issue -, Pages 769-773Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.msea.2006.02.403
Keywords
nanostructure; dewetting; Pt; GaN; thermal annealing
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Nanometer scale Pt metal islands formed by the dewetting of two-dimensional film on SiO2 dielectric materials during rapid thermal annealing were investigated. For the case of 30 nm thick Pt films, pattern formation and dewetting were initiated at temperatures of > 600 degrees C. Controlling the annealing temperature and time as well as the thickness of the Pt metal film permitted the size and density of Pt islands to be controlled. Furthermore, the islands show good resistance to dry-etching by a CF4-based plasma for dielectric etching, indicating that the metal islands produced by dewetting are suitable for use as an etch-mask in the fabrication of nano-scale structures. (c) 2006 Elsevier B.V. All rights reserved.
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