Journal
APPLIED PHYSICS LETTERS
Volume 90, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2716351
Keywords
-
Categories
Ask authors/readers for more resources
The authors report an atomistic study of the ballistic current through silicon nanowire metal-oxide-semiconductor transistors. A self-consistent quantum ballistic transport model is used to calculate the current in gate-all-around nanowire transistors, taking into account the full-band structure of the quantum wire with a sp(3) tight-binding approach. The authors demonstrate the occurence of an optimal wire cross section for which the on-state/off-state current ratio is maximum, a result which cannot be obtained in a standard bulk effective mass description. (c) 2007 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available