Journal
APPLIED SURFACE SCIENCE
Volume 253, Issue 11, Pages 5062-5066Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2006.11.013
Keywords
XPS; copper alloys; semiconductor devices; interface structure; surface diffusion
Ask authors/readers for more resources
Chemical composition of Cu/Ge layers deposited on a 1 mu m thick n-type GaAs epitaxial layer (doped with Te to a concentration of 5 x 10(18) cm(-3)) and its interface were examined ex situ by XPS combined with Ar+ sputtering. These measurements indicate a diffusion of Cu and Ge from the Cu/Ge layer towards GaAs and, also, an out-diffusion of Ga and As from the GaAs layer to the metallic films. The Auger parameter corrected Auger spectra and XPS spectra show only Cu and Ge metals in the in the Cu/Ge layer and in the interface. (c) 2006 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available