Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 7, Issue 40, Pages 22333-22340Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.5b06027
Keywords
complementary inverter; MoS2; WSe2; glass; sub-nanowatt; high gain
Funding
- National Research Foundation of Korea (NRF) [2014R1A2A1A01004815, 2012M3A7B4034985]
- Yonsei University (Future-Leading Research Initiative) [2014-22-0168]
- Brain Korea 21 Plus Program
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Two-dimensional (2D) semiconductor materials with discrete bandgap become important because of their interesting physical properties and potentials toward future nanoscale electronics. Many 2D-based field effect transistors (FETs) have thus been reported. Several attempts to fabricate 2D complementary (CMOS) logic inverters have been made too. However, those CMOS devices seldom showed the most important advantage of typical CMOS: low power consumption. Here, we adopted p-WSe2 and n-MoS2 nanosheets separately for the channels of bottom-gate-patterned FETs, to fabricate 2D dichalcogenide-based hetero-CMOS inverters on the same glass substrate. Our hetero-CMOS inverters with electrically isolated FETs demonstrate novel and superior device performances of a maximum voltage gain as similar to 27, sub-nanowatt power consumption, almost ideal noise margin approaching 0.5V(DD) (supply voltage, V-DD = 5 V) with a transition voltage of 2.3 V, and similar to 800 mu s for switching delay. Moreover, our glass-substrate CMOS device nicely performed digital logic (NOT, OR, and AND) and push-pull circuits for organic light-emitting diode switching, directly displaying the prospective of practical applications.
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