Journal
INFRARED PHYSICS & TECHNOLOGY
Volume 50, Issue 2-3, Pages 240-252Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.infrared.2006.10.015
Keywords
-
Categories
Ask authors/readers for more resources
In the paper, issues associated with the development and exploitation of materials used in fabrication of third generation infrared photon detectors are discussed. In this class of detectors two main competitors, HgCdTe photodiodes and quantum well photoconductors are considered. The performance figures of merit of state-of-the-art HgCdTe and QWIP focal plane arrays (FPAs) are similar because the main limitations come from the readout circuits. The metallurgical issues of the epitaxial layers such as uniformity and number of defected elements are the serious problems in the case of long wavelength infrared (LWIR) and very LWIR (VLWIR). HgCdTe FPAs. It is predicted that superlattice based InAs/GaInSb system grown on GaSb substrate seems to be an alternative to HgCdTc with good spatial uniformity and an ability to span cutoff wavelength from 3 to 25 mu m. In this context the material properties of type II superlattices are considered more in detail. (c) 2006 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available