Journal
PHYSICA B-CONDENSED MATTER
Volume 391, Issue 2, Pages 256-265Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physb.2006.10.001
Keywords
transport properties; lead tin telluride semiconductor; thermoelectrics; figure of merit
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Lead tin telluride-based compounds are p-type materials for thermoelectric applications, in the 50-600 degrees C temperature range. The electronic transport properties of PbTe and Pb1-xSnxTe materials are strongly dependent on the processing approach. Powder metallurgy is a suitable approach for the preparation of Functionally graded materials (FGMs) but its effects on the electronic properties have to be carefully checked. Powder metallurgical processing may introduce atomic defects and local strains into the material and, thereby, alter the carrier concentration. Such material may be in non-equilibrium conditions at the operating temperature with unstable thermoelectric properties. This effect can be reduced and eliminated by appropriate annealing procedures. In FGMs, annealing up to the stabilization of the thermoelectric properties is mandatory for achieving the desired carrier concentration profile along the sample. The design procedures of the FGMs, as well as the annealing effects on cold compacted and sintered Pb1-xSnxTe samples are described in details. (c) 2006 Elsevier B.V. All rights reserved.
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